CVD Graphene on Copper Foil 2cmx2cm

Product Overview The process of preparing graphene via Chemical Vapor Deposition (CVD) primarily involves three critical influencing factors: the substrate, the precursor, and the growth conditions. Among these, the substrate is a crucial element for graphene growth. Currently, 8-10 transition metals (such as Fe, Ru, Co, Rh, Ir, Ni, Pd, Pt, Cu, Au) and certain alloys (like Co-Ni, Au-Ni, Ni-Mo, and stainless steel) have been identified as suitable substrate metals for graphene preparation. The mechanisms for graphene formation on different substrate materials via CVD vary, but are primarily categorized into two types: Carbon Dissolution-Precipitation Mechanism: At high temperatures, decomposed carbon dissolves into the bulk of the substrate metal. Upon rapid cooling, it precipitates onto the surface to form graphene. Surface-Catalyzed Mechanism: On specific metals (e.g., copper), decomposed carbon forms graphene directly on the surface at high temperatures. This surface layer can inhibit further film deposition, making this mechanism more conducive to forming monolayer graphene. In practical applications, the synthesis methods for CVD graphene films may be adapted based on specific experimental requirements and conditions. Researchers often optimize and adjust the synthesis process according to the target properties and application scenarios. Concurrently, new synthesis methods and techniques are continuously being developed and explored to enhance the quality and performance of graphene films. Typically, the process involves initially growing graphene on a metal substrate, followed by spin-coating a layer of PMMA. The graphene is then transferred onto a target substrate such as silicon oxide, quartz, glass, PET, or a copper mesh for application. Technical Parameters Copper Foil Thickness: ~25 µm Area: 2 cm x 2 cm Number of Layers: Monolayer, Bilayer, 3-5 layers, 6-8 layers Note: Characterized by Raman spectroscopy on a Silicon Oxide substrate. Important Note Regarding Transfer Process Please specify your required pretreatment for the transfer process: Option A (Default): Spin-coating of PMMA on the graphene side AND etching of the copper foil backside. Option B (Custom): If you require a different pretreatment (e.g., PMMA only on the front side without backside etching), you must specify in the remarks when ordering. Failure to specify will result in the default process (Spin-coat + Etch) being applied

• High Quality: Possesses high purity and crystallinity.
• Excellent Electrical Properties: High carrier mobility with low resistivity.
• Excellent Transparency: High transmittance in the visible light spectrum.
• High Mechanical Strength: Good flexibility and durability.
• Good Chemical Stability: Exhibits remarkable stability at room temperature.